| PART |
Description |
Maker |
| KMM5364005CSW KMM5364005CSWG |
4M X 36 DRAM SIMM USING 4MX16 & QUAD CAS 4MX4, 4K REFRESH, 5V
4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
|
SAMSUNG[Samsung semiconductor]
|
| PAN1455 PAN1317 PAN1321 PAN1315A PAN1555 PAN1325A |
A Comprehensive Guide to Choosing the Right RF Module
|
Panasonic Battery Group
|
| R87B-FA1A15LPFR3 R87B-FA1A15HPF2 R87B-FA1A15HPF3 R |
Comprehensive Lineup of Single, Double, and Triple Axial Fans with Easy One-step Mounting
|
Omron Electronics LLC
|
| KMM5364003CSW KMM5364003CSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
| KMM5368003BSWG KMM5368003BSW |
8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5364003CSW KMM5364003CSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM5364005CKG KMM5364105CKG KMM5364105CK KMM536400 |
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V 4米36的DRAM上海药物研究所利用4Mx46M四中科院K/2K，刷新，5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
|
| KM44C4103C KM44C4003C KM44C4003CK-6 KM44C4003CKL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KMM5364003BSW |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V 4米36的DRAM上海药物研究所使用4Mx16
|
Samsung Semiconductor Co., Ltd.
|
| ZAPD-21 ZAPD-21-N |
500 MHz - 2000 MHz RF/MICROWAVE COMBINER, 1 dB INSERTION LOSS ROHS COMPLIANT, CASE F14
Power Splitter/Combiner 2 Way-0 50ヘ 500 to 2000 MHz
Power Splitter/Combiner 2 Way-0 50惟 500 to 2000 MHz
Power Splitter/Combiner 2 Way-0 50Ω 500 to 2000 MHz
|
Mini-Circuits
|
| AP77016-B04 |
uSAP77016-B04 G.723.1 Audio CODEC Middleware | User＇s Manual[10/2000] uSAP77016B04 g.723.1使用音频CODEC中间件|用户手册[10/2000]
|
Glenair, Inc.
|
| 2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor
25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
Microsemi, Corp.
|
